Gu B., Park T.J., Ahn J.-H., Huang X.-J., Lee S.Y., Choi Y.-K. (2007) A dielectric-modulated field-effect transistor for biosensing.
We have reported that DMDG-JL-MOSFET exhibits significant increase in sensitivity when compared to other contemporary JL-MOSFET based biosensors, thus making the proposed device an attractive solution for biosensing applications.īergveld P (1986) The development and application of fet-based biosensors.
Further, the effectiveness of the proposed DMDG-JL-MOSFET based biosensor is confirmed by benchmarking the sensitivity metric with contemporary architectures of JL-MOSFET based biosensor. It has been observed that at a cavity length ( L c a v) of 25 nm, T i O 2 shows 87%, 68% and 52% higher sensitivity than if S i O 2 is taken as gate dielectric in case of neutral, positively charged and negatively charged biomolecules respectively.
The variation in threshold voltage ( V t h), drain current ( I d) and I O N/ I O F F ratio has been used as the sensing metric to estimate the sensitivity of the proposed biosensor. The model has been validated with data obtained from Sentaurus TCAD simulator. We then identify the thickness of the Ferroelectric layer over the existing gate stack with a view to achieve steep sub-threshold slope (SS) while simultaneously ensuring hysteresis-free characteristics, including enhanced Analog as well as Digital performance of the device.In this work, a 2 − D analytical model of Dielectrically Modulated, Dual Material, Double Gate Junctionless MOSFET (DMDG-JL-MOSFET) based label free biosensor has been proposed to investigate the effect of high- κ gate dielectric materials ( T i O 2, H f O 2, and A l 2 O 3) and cavity length variation on the sensitivity of the biosensor.
Through detailed process simulations, the process steps required to achieve this device design are determined, thus providing a more practical appraisal of the feasibility of the device. In this paper, we firstly present the design of an optimized N-channel Partially Junction-less Bulk MOSFET with a view to suppressing various leakage mechanisms, while also taking channel quantization effects into account. With the use of Ferroelectric materials in the gate stack, enhanced transverse (gate) electric field has the potential to enable greater scalability, which needs to be further explored in the context of planar Bulk MOSFETs. Despite the use of High-k gate stacks, poor channel electrostatics at short channel lengths has limited the applicability of conventional Bulk MOSFETs.
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